unisonic technologies co., ltd 4n90 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-479.b 4 amps, 900 volts n-channel power mosfet ? description the utc 4n90 is a n-channel enhancement mosfet adopting utc?s advanced technology to provide customers with dmos, planar stripe technology. this technology is designed to meet the requirements of the minimum on- state resistance and perfect switching performance. it also can withstand high energy pulse in the avalanche and communication mode. the utc 4n90 is particularly applied in high efficiency switch mode power supplies. ? features * v ds =900v * i d =4a * r ds(on) =4.2 ? @ v gs =10v * typically 17nc low gate charge * high switching speed * typically 5.6pf low c rss * 100% avalanche tested * improved dv/dt capability ? symbol 1.gate 3.source 2.drain to-220 1 1 to-220f to-252 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 4n90l-ta3-t 4n90g-ta3-t to-220 g d s tube 4n90l-tf3-t 4n90g-tf3-t to-220f g d s tube 4N90L-TN3-R 4n90g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
4n90 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-479.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 900 v gate to source voltage v gss 30 v avalanche current (note 2) i ar 4 a continuous i d 4 a continuous drain current pulsed (note 2) i dm 16 a single pulsed (note 3) e as 570 mj avalanche energy repetitive (note 2) e ar 14 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 140 to-220f 47 power dissipation(t c =25c) to-252 54 w to-220 1.12 to-220f 0.38 derate above 25c to-252 p d 0.43 w/c operating junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note : 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l=67mh, i as =4a, v dd =50v, r g =25 ? , starting t j =25c 4. i sd 4a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit to-220 62.5 to-220f 62.5 junction to ambient to-252 ja 110 c/w to-220 0.89 to-220f 2.66 junction to case to-252 jc 2.3 c/w
4n90 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-479.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 1.05 v/c v ds =900v, v gs =0v 10 a drain-source leakage current i dss v ds =720v, t c =125c 100 a forward i gss v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =2a 3.5 4.2 ? dynamic parameters input capacitance c iss 740 960 pf output capacitance c oss 65 85 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 5.6 7.3 pf switching parameters total gate charge q g 17 22 nc gate-source charge q gs 4.5 nc gate-drain charge q gd v ds =720v, v gs =10v, i d =4a (note 1,2) 7.5 nc turn-on delay time t d(on) 25 60 ns turn-on rise time t r 50 110 ns turn-off delay time t d(off) 40 90 ns turn-off fall time t f v dd =450v, i d =4a, r g =25 ? (note 1,2) 35 80 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4 a maximum body-diode pulsed current i sm 16 a drain-source diode forward voltage v sd i s =4a, v gs =0v 1.4 v body diode reverse recovery time t rr 450 ns body diode reverse recovery charge q rr v gs =0v, i s =4a, di f /dt=100a/ s (note 1) 3.5 c note : 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4n90 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-479.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
4n90 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-479.b ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
4n90 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-479.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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